Modeling read SNM considering both soft oxide breakdown and negative bias temperature instability
نویسندگان
چکیده
In this paper, we propose a read SNM model which considers soft oxide breakdown (SBD). It makes use of a resistance for modeling the soft oxide breakdown which adds two terms to the original model expression for the read SNM. The accuracy of the model is verified by comparing its predictions with those of HSPICE simulations for 45, 32, and 22 nm technologies. The comparison reveals a very good accuracy for the model. The results also show that NBTI aggravates the effect of SBD on the read SNM. This suggests that the effect of NBTI and SBD should be studied concurrently as has been performed in our model. 2012 Elsevier Ltd. All rights reserved.
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عنوان ژورنال:
- Microelectronics Reliability
دوره 52 شماره
صفحات -
تاریخ انتشار 2012